InxGa1-xN/GaN double heterojunction solar cell optimization for high temperature operation

InxGa1-xN/GaN solar cells are ideal candidates for use in extreme temperature applications. The conversion efficiency potential of double heterostructure was investigated at high temperatures using physical simulation. For a targeted working temperature, optimized lies compromise between the absorber bandgap energy determined by In composition and band offsets heterointerface directly correlated with capability photogenerated carriers to cross through barrier thermoionic emission. An 18% is obtained an content 50% 400K decreases down 10% 35% 500K. As operating goes higher, indium needs be reduced order limit detrimental effect increasing intrinsic carrier concentration. consequence decreasing due covered range spectrum. same time, no more limiting parameter, as there decreases, higher increases thermionic transport probability. This result shows interest design